2SJ358

NEC 2SJ358

Part No:

2SJ358

Manufacturer:

NEC

Datasheet:

-

Package:

-

AINNX NO:

29137775-2SJ358

Description:

Power Field-Effect Transistor, 3A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, MP-2, 3 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Package Description
    SMALL OUTLINE, R-PSSO-F3
  • Package Style
    SMALL OUTLINE
  • Package Body Material
    PLASTIC/EPOXY
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    150 °C
  • Rohs Code
    No
  • Manufacturer Part Number
    2SJ358
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Renesas Electronics Corporation
  • Number of Elements
    1
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    RENESAS ELECTRONICS CORP
  • Risk Rank
    5.33
  • Drain Current-Max (ID)
    3 A
  • JESD-609 Code
    e0
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSSO-F3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • Drain Current-Max (Abs) (ID)
    3 A
  • Drain-source On Resistance-Max
    0.4 Ω
  • Pulsed Drain Current-Max (IDM)
    6 A
  • DS Breakdown Voltage-Min
    60 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    2 W
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