MRF21120R6

Motorola Semiconductor Products MRF21120R6

Part No:

MRF21120R6

Package:

-

AINNX NO:

69082977-MRF21120R6

Description:

Description: RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NI-1230, CASE 375D-04, 4 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    MOTOROLA INC
  • Package Description
    FLANGE MOUNT, R-CDFM-F4
  • Number of Elements
    2
  • Operating Temperature-Max
    200 °C
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • ECCN Code
    EAR99
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-CDFM-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    COMMON SOURCE, 2 ELEMENTS
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    65 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    389 W
  • Highest Frequency Band
    S BAND
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Motorola Semiconductor Products MRF21120R6.