MRF141G

Motorola Mobility LLC MRF141G

Part No:

MRF141G

Package:

-

AINNX NO:

68721634-MRF141G

Description:

Description: 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    2
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    MOTOROLA INC
  • Package Description
    FLANGE MOUNT, R-CDFM-F4
  • Manufacturer Package Code
    CASE 375-04
  • Drain Current-Max (ID)
    32 A
  • Operating Temperature-Max
    200 °C
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • ECCN Code
    EAR99
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.75
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    4
  • JESD-30 Code
    R-CDFM-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    COMMON SOURCE, 2 ELEMENTS
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.15 Ω
  • DS Breakdown Voltage-Min
    65 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    500 W
  • Highest Frequency Band
    VERY HIGH FREQUENCY BAND
  • Power Dissipation Ambient-Max
    500 W
  • Power Gain-Min (Gp)
    12 dB
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