MTD20N06V

Motorola Mobility LLC MTD20N06V

Part No:

MTD20N06V

Datasheet:

Package:

-

AINNX NO:

69157525-MTD20N06V

Description:

20A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    MOTOROLA INC
  • Package Description
    SMALL OUTLINE, R-PSSO-G2
  • Drain Current-Max (ID)
    20 A
  • Number of Elements
    1
  • Operating Temperature-Max
    175 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Turn-off Time-Max (toff)
    140 ns
  • Turn-on Time-Max (ton)
    170 ns
  • JESD-609 Code
    e0
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    AVALANCHE RATED
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.95
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.085 Ω
  • Pulsed Drain Current-Max (IDM)
    70 A
  • DS Breakdown Voltage-Min
    60 V
  • Avalanche Energy Rating (Eas)
    200 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    60 W
  • Feedback Cap-Max (Crss)
    80 pF
  • Power Dissipation Ambient-Max
    60 W
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