FM600TU-3A

Mitsubishi Materials U.S.A FM600TU-3A

Part No:

FM600TU-3A

Datasheet:

-

Package:

-

AINNX NO:

32891785-FM600TU-3A

Description:

MOSFET, HIGH POWER MODULE, 6 N CHANNEL, 150V, 300A, Transistor Polarity:Six N Channel, Continuous Drain Current Id:300Arms, Drain Source Voltage Vds:150V, On Resistance Rds(on):0.0016ohm, Rds(on) Test Voltage Vgs:15V, Product Range:-RoHS Compliant:

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    14
  • Transistor Element Material
    SILICON
  • Manufacturer Part Number
    FM600TU-3A
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MITSUBISHI ELECTRIC CORP
  • Part Package Code
    MODULE
  • Package Description
    FLANGE MOUNT, R-XUFM-X14
  • Risk Rank
    5.37
  • Drain Current-Max (ID)
    300 A
  • Number of Elements
    6
  • Operating Temperature-Max
    125 °C
  • Package Body Material
    UNSPECIFIED
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • RoHS
    Non-Compliant
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    UL RECOGNIZED
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    UNSPECIFIED
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    14
  • JESD-30 Code
    R-XUFM-X14
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.0022 Ω
  • Pulsed Drain Current-Max (IDM)
    600 A
  • DS Breakdown Voltage-Min
    150 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    960 W
  • Drain to Source Resistance
    1.6 mΩ
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