CM800E6C-66H

Mitsubishi Materials U.S.A CM800E6C-66H

Part No:

CM800E6C-66H

Datasheet:

-

Package:

-

AINNX NO:

32423234-CM800E6C-66H

Description:

POWER IGBT TRANSISTOR

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    9
  • Transistor Element Material
    SILICON
  • Manufacturer Part Number
    CM800E6C-66H
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MITSUBISHI ELECTRIC CORP
  • Part Package Code
    MODULE
  • Package Description
    FLANGE MOUNT, R-XUFM-X9
  • Risk Rank
    5.69
  • Number of Elements
    2
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    UNSPECIFIED
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    UNSPECIFIED
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    9
  • JESD-30 Code
    R-XUFM-X9
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    COMPLEX
  • Case Connection
    ISOLATED
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (Abs)
    9600 W
  • Collector Current-Max (IC)
    800 A
  • Collector-Emitter Voltage-Max
    3300 V
  • Gate-Emitter Voltage-Max
    20 V
  • VCEsat-Max
    4.2 V
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