CM1200HC-66H

Mitsubishi Materials U.S.A CM1200HC-66H

Part No:

CM1200HC-66H

Datasheet:

-

Package:

Module

AINNX NO:

30861010-CM1200HC-66H

Description:

IGBT Modules IGBT MODULE HIGH VOLTAGE SINGLE H-SERIES

Products specifications
  • Package / Case
    Module
  • Collector- Emitter Voltage VCEO Max
    3300 V
  • Collector-Emitter Saturation Voltage
    3.3 V
  • Continuous Collector Current at 25 C
    1200 A
  • Factory Pack QuantityFactory Pack Quantity
    2
  • Gate-Emitter Leakage Current
    0.5 uA
  • Manufacturer Part Number
    CM1200HC-66H
  • Maximum Gate Emitter Voltage
    20 V
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 125 C
  • Minimum Operating Temperature
    - 40 C
  • Mounting Styles
    SMD/SMT
  • Pd - Power Dissipation
    14700 W
  • RoHS
    N
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Series
    CM1200
  • Configuration
    Triple
  • Product
    IGBT Silicon Modules
  • Height (mm)
    38 mm
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