Mitsubishi Materials U.S.A CM1200DB-34N

Package / Case

Module

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Number of Terminals

10

Transistor Element Material

SILICON

RoHS

N

Collector- Emitter Voltage VCEO Max

1700 V

Pd - Power Dissipation

6900 W

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 125 C

Maximum Gate Emitter Voltage

20 V

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

2

Manufacturer Part Number

CM1200DB-34N

Package Description

FLANGE MOUNT, R-XUFM-X10

Package Style

FLANGE MOUNT

Package Body Material

UNSPECIFIED

Turn-on Time-Nom (ton)

1400 ns

Turn-off Time-Nom (toff)

1500 ns

Operating Temperature-Max

150 °C

Package Shape

RECTANGULAR

Number of Elements

2

Part Life Cycle Code

Active

Ihs Manufacturer

MITSUBISHI ELECTRIC CORP

Risk Rank

5.68

Part Package Code

MODULE

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Bulk

Series

CM1200

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

HIGH RELIABILITY

Terminal Position

UPPER

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

UNSPECIFIED

Reach Compliance Code

unknown

Pin Count

a count of all of the component leads (or pins)

10

JESD-30 Code

R-XUFM-X10

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Configuration

Dual

Case Connection

ISOLATED

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

6900 W

Collector Current-Max (IC)

1200 A

Collector-Emitter Voltage-Max

1700 V

Gate-Emitter Voltage-Max

20 V

VCEsat-Max

2.8 V

Product

IGBT Silicon Modules

Height (mm)

38 mm