All Products
Mitsubishi Electric MIG12J504L
Part No:
MIG12J504L
Manufacturer:
Package:
-
AINNX NO:
69083962-MIG12J504L
Category:
Description:
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES
Products specifications
- Part Life Cycle CodeObsolete
- Ihs ManufacturerMITSUBISHI ELECTRIC CORP
- Package Description,
- Number of Elements1
- Operating Temperature-Max100 °C
- ECCN CodeEAR99
- Reach Compliance Codeunknown
- Power Dissipation-Max (Abs)43 W
- Collector Current-Max (IC)12 A
- Collector-Emitter Voltage-Max600 V
- VCEsat-Max2.3 V
0 Similar Products Remaining
Hot Sale
CM150DY-13T#300G
MitsubishiMitsubishi Electric CM150DY-13T#300G Dual IGBT Module, 150 A 600 V 94x34mmCM150DY-12H
Mitsubishi ElectricDescription: Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel,
CM100RL-24NF
Mitsubishi ElectricInsulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-20CM30MD-12H
Mitsubishi ElectricInsulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel,CM10MD3-12H
Mitsubishi ElectricInsulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-ChannelCM100E3Y-12E
Mitsubishi ElectricDescription: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-ChannelCM15AD05-24H
Mitsubishi ElectricDescription: Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-ChannelCM900HG-90X
Mitsubishi ElectricCM50AD05-12H
Mitsubishi ElectricInsulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-ChannelCM1200HA-50H
Mitsubishi ElectricDescription: Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES, N-Channel, MODULE-9