FS10SM-10

Mitsubishi FS10SM-10

Part No:

FS10SM-10

Manufacturer:

Mitsubishi

Datasheet:

-

Package:

-

AINNX NO:

24134491-FS10SM-10

Description:

Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • RoHS
    Non-Compliant
  • Package Description
    FLANGE MOUNT, R-PSFM-T3
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    PLASTIC/EPOXY
  • Operating Temperature-Max
    150 °C
  • Manufacturer Part Number
    FS10SM-10
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Mitsubishi Electric
  • Number of Elements
    1
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    MITSUBISHI ELECTRIC CORP
  • Risk Rank
    7.83
  • Drain Current-Max (ID)
    10 A
  • Subcategory
    FET General Purpose Power
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (Abs) (ID)
    10 A
  • Drain-source On Resistance-Max
    0.9 Ω
  • Pulsed Drain Current-Max (IDM)
    30 A
  • DS Breakdown Voltage-Min
    500 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    125 W
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