All Products
Mitsubishi FS14SM-16A
Part No:
FS14SM-16A
Manufacturer:
Datasheet:
Package:
-
AINNX NO:
23830058-FS14SM-16A
Category:
Description:
Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Products specifications
- RoHSNon-Compliant
- Drain to Source Voltage (Vdss)800 V
- Continuous Drain Current (ID)14 A
0 Similar Products Remaining
Hot Sale
FM400TU-07A
MitsubishiMitsubishi TransistorsFM400TU-2A
MitsubishiMitsubishi Electric US, Inc TransistorsFS18SM-10
MitsubishiPower Field-Effect Transistor, 18A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETFS10KM-10
MitsubishiPower Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETFS22SM-9
MitsubishiPower Field-Effect Transistor, 22A I(D), 450V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETFK10KM-9
MitsubishiPower Field-Effect Transistor, 10A I(D), 450V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETFS14KM10
MitsubishiPower Field-Effect Transistor, 14A I(D), 500V, 0.64ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN2SK2974
MitsubishiRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-3FS7UM16A
MitsubishiPower Field-Effect Transistor, 7A I(D), 800V, 1.64ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINFS10UM-12
MitsubishiPower Field-Effect Transistor, 10A I(D), 600V, 0.94ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN