APTMC120HRM40CT3G

Microsemi Corporation APTMC120HRM40CT3G

Part No:

APTMC120HRM40CT3G

Package:

SP3

ROHS:

AINNX NO:

6070829-APTMC120HRM40CT3G

Description:

Phase leg 1200V 34mOhm 179nC Dual Common Emitter Power Module MOSFET

Products specifications
  • Mount
    Chassis Mount, Through Hole
  • Mounting Type
    Chassis Mount
  • Package / Case
    SP3
  • Number of Pins
    3
  • Number of Elements
    1
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    200 ns
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    1200V 1.2kV
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Published
    1997
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175°C
  • Min Operating Temperature
    -40°C
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    110 ns
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    45ns
  • Drain to Source Voltage (Vdss)
    1.2kV
  • Fall Time (Typ)
    40 ns
  • Transistor Type
    2 N Channel (Phase Leg + Dual Common Emitter)
  • Continuous Drain Current (ID)
    64A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    240W
  • Drain to Source Resistance
    34mOhm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Lead Free
    Lead Free
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