2003

Microsemi Corporation 2003

Part No:

2003

Datasheet:

2003

Package:

55BT-1

AINNX NO:

6085540-2003

Description:

Trans RF BJT NPN 50V 0.5A 3-Pin Case 55BT-1

Products specifications
  • Mount
    Chassis Mount, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    55BT-1
  • Number of Pins
    3
  • Supplier Device Package
    55BT-1
  • Collector-Emitter Breakdown Voltage
    50V
  • Current-Collector (Ic) (Max)
    500mA
  • Number of Elements
    1
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    200°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    200°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    12W
  • Frequency
    2GHz
  • Polarity
    NPN
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    12W
  • Power - Max
    12W
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 100mA 5V
  • Gain
    8.5dB
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Max Frequency
    2GHz
  • Frequency - Transition
    2GHz
  • Collector Base Voltage (VCBO)
    45V
  • Emitter Base Voltage (VEBO)
    3.5V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    Non-RoHS Compliant
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