MRF5812GR1

Microsemi Corporation MRF5812GR1

Part No:

MRF5812GR1

Datasheet:

MRF5812(G)R1,R2

Package:

8-SOIC (0.154, 3.90mm Width)

ROHS:

AINNX NO:

6085330-MRF5812GR1

Description:

TRANS NPN 15V 200MA 8-SOIC

Products specifications
  • Lifecycle Status
    OBSOLETE (Last Updated: 2 weeks ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    15V
  • Number of Elements
    1
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1.25W
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MRF5812
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • Configuration
    SINGLE
  • Power - Max
    1.25W
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    15V
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 50mA 5V
  • Gain
    13dB ~ 15.5dB
  • Transition Frequency
    5000MHz
  • Max Breakdown Voltage
    15V
  • Frequency - Transition
    5GHz
  • Collector Base Voltage (VCBO)
    30V
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY B
  • Collector-Base Capacitance-Max
    2pF
  • Noise Figure (dB Typ @ f)
    2dB ~ 3dB @ 500MHz
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Lead Free
    Lead Free
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