W3E32M72S-266BM

Microsemi W3E32M72S-266BM

Part No:

W3E32M72S-266BM

Manufacturer:

Microsemi

Package:

-

AINNX NO:

22479248-W3E32M72S-266BM

Category:

Memory Cards

Description:

DRAM Module DDR SDRAM 256Mbyte

Products specifications
  • ECCN (US)
    4A994.a
  • Module
    DRAM Module
  • Module Density
    256Mbyte
  • Number of Chip per Module
    5
  • Chip Density (bit)
    460.8M
  • Data Bus Width (bit)
    72
  • Max. Access Time (ns)
    0.75
  • Maximum Clock Rate (MHz)
    266
  • Chip Package Type
    PBGA
  • Minimum Operating Supply Voltage (V)
    2.3
  • Typical Operating Supply Voltage (V)
    2.5
  • Maximum Operating Supply Voltage (V)
    2.7
  • Operating Current (mA)
    2000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    125
  • Supplier Temperature Grade
    Military
  • ECC Support
    Yes
  • Number of Chip Banks
    4
  • CAS Latency
    2.5
  • SPD EEPROM Support
    No
  • Supplier Package
    BGA
  • Mounting
    Surface Mount
  • Package Height
    2.03(Max)
  • Package Length
    32.1(Max)
  • Package Width
    25.1(Max)
  • PCB changed
    219
  • Pin Count

    a count of all of the component leads (or pins)

    219
  • Organization
    32Mx72
  • PLL
    No
  • Self Refresh
    Yes
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    Supplier Unconfirmed
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