MSCSM120HM16T3AG

Microchip Technology MSCSM120HM16T3AG

Part No:

MSCSM120HM16T3AG

Datasheet:

-

Package:

Module

AINNX NO:

28814526-MSCSM120HM16T3AG

Description:

PM-MOSFET-SIC-SP3F

Products specifications
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    -
  • Mfr
    Microchip Technology
  • Package
    Bulk
  • Product Status
    Active
  • Current - Continuous Drain (Id) @ 25℃
    173A (Tc)
  • Vds - Drain-Source Breakdown Voltage
    1200 V
  • Typical Turn-On Delay Time
    30 ns
  • Vgs th - Gate-Source Threshold Voltage
    1.8 V
  • Pd - Power Dissipation
    745 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Vgs - Gate-Source Voltage
    - 10 V, 23 V
  • Minimum Operating Temperature
    - 40 C
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Mounting Styles
    Screw Mounts
  • Manufacturer
    Microchip
  • Brand
    Microchip Technology
  • Rds On - Drain-Source Resistance
    16 mOhms
  • RoHS
    Details
  • Typical Turn-Off Delay Time
    50 ns
  • Id - Continuous Drain Current
    173 A
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C ~ 175°C (TJ)
  • Type
    Full Bridge SiC MOSFET Power Module
  • Subcategory
    Discrete Semiconductor Modules
  • Technology
    SiC
  • Configuration
    Full Bridge
  • Power - Max
    745W (Tc)
  • FET Type
    4 N-Channel (Full Bridge)
  • Rds On (Max) @ Id, Vgs
    16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id
    2.8V @ 6mA
  • Input Capacitance (Ciss) (Max) @ Vds
    6040pF @ 1000V
  • Gate Charge (Qg) (Max) @ Vgs
    464nC @ 20V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    30 ns
  • Drain to Source Voltage (Vdss)
    1200V (1.2kV)
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    Discrete Semiconductor Modules
  • FET Feature
    Silicon Carbide (SiC)
  • Product
    Power MOSFET Modules
  • Product Category

    a particular group of related products.

    Discrete Semiconductor Modules
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