DN2625DK6-G

Microchip Technology DN2625DK6-G

Part No:

DN2625DK6-G

Datasheet:

DN2625

Package:

8-VDFN Exposed Pad

ROHS:

AINNX NO:

6379932-DN2625DK6-G

Description:

MOSFET N-CHANNEL DEPLETION MODE

Products specifications
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-VDFN Exposed Pad
  • Weight
    37.393021mg
  • Transistor Element Material
    SILICON
  • Number of Elements
    1
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    10 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    3.5Ohm
  • Terminal Finish
    MATTE TIN
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW THRESHOLD
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • JESD-30 Code
    R-PDSO-N8
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Number of Channels
    2
  • Voltage
    250V
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Current
    11A
  • Case Connection
    DRAIN
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    10 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.5 Ω @ 1A, 0V
  • Input Capacitance (Ciss) (Max) @ Vds
    1000pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    7.04nC @ 1.5V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    20ns
  • Fall Time (Typ)
    20 ns
  • Continuous Drain Current (ID)
    1.1A
  • Gate to Source Voltage (Vgs)
    20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Depletion Mode
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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