APT80GA60LD40

Microchip Technology APT80GA60LD40

Part No:

APT80GA60LD40

Datasheet:

-

Package:

TO-264-3

AINNX NO:

31026350-APT80GA60LD40

Description:

IGBT Transistors FG, IGBT-COMBI, 600V, TO-264View in Development Tools Selector

Products specifications
  • Lifecycle Status
    Production (Last Updated: 2 months ago)
  • Package / Case
    TO-264-3
  • Mounting Type
    Through Hole
  • Mount
    Through Hole
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Supplier Device Package
    TO-264
  • Weight
    10.6 g
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • RoHS
    Details
  • Mounting Styles
    Through Hole
  • Collector- Emitter Voltage VCEO Max
    600 V
  • Maximum Gate Emitter Voltage
    - 30 V, + 30 V
  • Pd - Power Dissipation
    625 W
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Continuous Collector Current Ic Max
    143 A
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Tradename
    POWER MOS 8
  • Unit Weight
    0.373904 oz
  • Package
    Tube
  • Current-Collector (Ic) (Max)
    143 A
  • Base Product Number
    APT80GA60
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Test Conditions
    400V, 47A, 4.7Ohm, 15V
  • Schedule B
    8541290080, 8541290080/8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080
  • Collector-Emitter Breakdown Voltage
    600 V
  • Package Description
    ROHS COMPLIANT, TO-264, 3 PIN
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    PLASTIC/EPOXY
  • Turn-on Time-Nom (ton)
    52 ns
  • Turn-off Time-Nom (toff)
    326 ns
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    150 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    APT80GA60LD40
  • Package Shape
    RECTANGULAR
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MICROSEMI CORP
  • Risk Rank
    2.25
  • Part Package Code
    TO-264AA
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Series
    POWER MOS 8™
  • JESD-609 Code
    e1
  • Pbfree Code
    Yes
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW CONDUCTION LOSS
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    625 W
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    Single
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    625
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    625 W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600 V
  • Max Collector Current
    143 A
  • Operating Temperature Range

    An operating temperature is the allowable temperature range of the local ambient environment at which an electrical or mechanical device operates. The device will operate effectively within a specified temperature range which varies based on the device function and application context, and ranges from the minimum operating temperature to the maximum operating temperature (or peak operating temperature).

    - 55 C to + 150 C
  • Reverse Recovery Time
    22 ns
  • JEDEC-95 Code
    TO-264AA
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 47A
  • Collector Current-Max (IC)
    143 A
  • Continuous Collector Current
    143 A
  • IGBT Type
    PT
  • Collector-Emitter Voltage-Max
    600 V
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    230 nC
  • Current - Collector Pulsed (Icm)
    240 A
  • Td (on/off) @ 25°C
    23ns/158ns
  • Switching Energy
    840µJ (on), 751µJ (off)
  • Reverse Recovery Time (trr)
    22 ns
  • Height
    5.21 mm
  • Length
    26.49 mm
  • Width
    20.5 mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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