Microchip Technology APT35GP120B2DQ2G

Lifecycle Status

Production (Last Updated: 2 months ago)

Package / Case

TO-247-3

Mounting Type

Through Hole

Mount

Through Hole

Number of Pins

3

RoHS

Details

Mounting Styles

Through Hole

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

1.340411 oz

Package

Tube

Current-Collector (Ic) (Max)

96 A

Base Product Number

APT35GP120

Mfr

Microchip Technology

Product Status

Active

Test Conditions

600V, 35A, 4.3Ohm, 15V

Schedule B

8541290080/8541290080

Collector-Emitter Breakdown Voltage

1.2 kV

Voltage Rating (DC)

1.2 kV

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Series

POWER MOS 7®

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

543 W

Current Rating

Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

96 A

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Input Type

Standard

Power - Max

543 W

Collector Emitter Voltage (VCEO)

1.2 kV

Max Collector Current

96 A

Voltage - Collector Emitter Breakdown (Max)

1200 V

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 35A

IGBT Type

PT

Gate Charge

the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

150 nC

Current - Collector Pulsed (Icm)

140 A

Td (on/off) @ 25°C

16ns/95ns

Switching Energy

750µJ (on), 680µJ (off)

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

Lead Free

Lead Free