APT80GA60B

Microchip Technology APT80GA60B

Part No:

APT80GA60B

Datasheet:

-

Package:

TO-247-3

AINNX NO:

31026346-APT80GA60B

Description:

IGBT Transistors FG, IGBT, 600V, TO-247View in Development Tools Selector

Products specifications
  • Package / Case
    TO-247-3
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-247 [B]
  • RoHS
    Details
  • Mounting Styles
    Through Hole
  • Collector- Emitter Voltage VCEO Max
    600 V
  • Maximum Gate Emitter Voltage
    - 20 V, + 20 V
  • Pd - Power Dissipation
    625 W
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Continuous Collector Current Ic Max
    143 A
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Tradename
    POWER MOS 8
  • Unit Weight
    1.340411 oz
  • Package
    Tube
  • Current-Collector (Ic) (Max)
    143 A
  • Base Product Number
    APT80GA60
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Test Conditions
    400V, 47A, 4.7Ohm, 15V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Series
    -
  • Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    625 W
  • Operating Temperature Range

    An operating temperature is the allowable temperature range of the local ambient environment at which an electrical or mechanical device operates. The device will operate effectively within a specified temperature range which varies based on the device function and application context, and ranges from the minimum operating temperature to the maximum operating temperature (or peak operating temperature).

    - 55 C to + 150 C
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 47A
  • Continuous Collector Current
    143 A
  • IGBT Type
    PT
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    230 nC
  • Current - Collector Pulsed (Icm)
    240 A
  • Td (on/off) @ 25°C
    23ns/158ns
  • Switching Energy
    840µJ (on), 751µJ (off)
  • Height
    21.46 mm
  • Length
    16.26 mm
  • Width
    5.31 mm
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