Microchip Technology APT64GA90LD30

Lifecycle Status

Production (Last Updated: 2 months ago)

Package / Case

TO-264-3

Mounting Type

Through Hole

Mount

Through Hole

Supplier Device Package

TO-264 [L]

Weight

10.6 g

RoHS

Details

Mounting Styles

Through Hole

Collector- Emitter Voltage VCEO Max

900 V

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Pd - Power Dissipation

500 W

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Continuous Collector Current Ic Max

117 A

Factory Pack QuantityFactory Pack Quantity

1

Tradename

POWER MOS 8

Unit Weight

0.373904 oz

Package

Tube

Current-Collector (Ic) (Max)

117 A

Base Product Number

APT64GA90

Mfr

Microchip Technology

Product Status

Active

Test Conditions

600V, 38A, 4.7Ohm, 15V

Collector-Emitter Breakdown Voltage

900 V

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Series

POWER MOS 8™

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

500 W

Configuration

Single

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

500

Input Type

Standard

Power - Max

500 W

Collector Emitter Voltage (VCEO)

900 V

Max Collector Current

117 A

Operating Temperature Range

An operating temperature is the allowable temperature range of the local ambient environment at which an electrical or mechanical device operates. The device will operate effectively within a specified temperature range which varies based on the device function and application context, and ranges from the minimum operating temperature to the maximum operating temperature (or peak operating temperature).

- 55 C to + 150 C

Voltage - Collector Emitter Breakdown (Max)

900 V

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 38A

Continuous Collector Current

117 A

IGBT Type

PT

Gate Charge

the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

162 nC

Current - Collector Pulsed (Icm)

193 A

Td (on/off) @ 25°C

18ns/131ns

Switching Energy

1192µJ (on), 1088µJ (off)

Height

5.21 mm

Length

26.49 mm

Width

20.5 mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No