Microchip Technology APT64GA90B2D30

Lifecycle Status

Production (Last Updated: 2 months ago)

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Mount

Through Hole

RoHS

Details

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

0.283029 oz

Package

Tube

Current-Collector (Ic) (Max)

117 A

Base Product Number

APT64GA90

Mfr

Microchip Technology

Product Status

Active

Test Conditions

600V, 38A, 4.7Ohm, 15V

Collector-Emitter Breakdown Voltage

900 V

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Series

POWER MOS 8™

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

500 W

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

500

Input Type

Standard

Power - Max

500 W

Collector Emitter Voltage (VCEO)

900 V

Max Collector Current

117 A

Voltage - Collector Emitter Breakdown (Max)

900 V

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 38A

Continuous Collector Current

117

IGBT Type

PT

Gate Charge

the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

162 nC

Current - Collector Pulsed (Icm)

193 A

Td (on/off) @ 25°C

18ns/131ns

Switching Energy

1192µJ (on), 1088µJ (off)

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No