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Microchip Technology APT50GN120L2DQ2G
APT50GN120L2DQ2G
TO-264-3
31026364-APT50GN120L2DQ2G
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHSView in Development Tools Selector
- Package / CaseTO-264-3
- Mounting TypeThrough Hole
- RoHSDetails
- Mounting StylesThrough Hole
- Collector- Emitter Voltage VCEO Max1.2 kV
- Maximum Gate Emitter Voltage- 20 V, + 20 V
- Pd - Power Dissipation543 W
- Minimum Operating Temperature- 55 C
- Maximum Operating Temperature
the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.
+ 150 C - Continuous Collector Current Ic Max134 A
- Factory Pack QuantityFactory Pack Quantity1
- Unit Weight0.373904 oz
- PackageTube
- Current-Collector (Ic) (Max)134 A
- Base Product NumberAPT50GN120
- MfrMicrochip Technology
- Product StatusActive
- Test Conditions800V, 50A, 2.2Ohm, 15V
- Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Tube - Operating Temperature
The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.
-55°C ~ 150°C (TJ) - Series-
- ConfigurationSingle
- Power Dissipation
the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.
543 - Input TypeStandard
- Power - Max543 W
- Operating Temperature Range
An operating temperature is the allowable temperature range of the local ambient environment at which an electrical or mechanical device operates. The device will operate effectively within a specified temperature range which varies based on the device function and application context, and ranges from the minimum operating temperature to the maximum operating temperature (or peak operating temperature).
- 55 C to + 150 C - Voltage - Collector Emitter Breakdown (Max)1200 V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
- Continuous Collector Current134 A
- IGBT TypeNPT, Trench Field Stop
- Gate Charge
the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.
315 nC - Current - Collector Pulsed (Icm)150 A
- Td (on/off) @ 25°C28ns/320ns
- Switching Energy4495µJ (off)
- Height5.21 mm
- Length26.49 mm
- Width20.5 mm
Quantity
Unit Price
Ext. Price
1+
$1,310.459648
$1,310.44
10+
$1,236.282694
$12,362.86
100+
$1,166.304442
$116,630.46
500+
$1,100.287184
$550,143.57
1000+
$1,038.006748
$1,038,006.80
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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