APT40GR120S

Microchip Technology APT40GR120S

Part No:

APT40GR120S

Datasheet:

-

Package:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AINNX NO:

31026327-APT40GR120S

Description:

IGBT Transistors FG, IGBT, 1200V, 40A, TO-268View in Development Tools Selector

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    D3Pak
  • RoHS
    Details
  • Mounting Styles
    SMD/SMT
  • Collector- Emitter Voltage VCEO Max
    1.2 kV
  • Maximum Gate Emitter Voltage
    - 30 V, + 30 V
  • Pd - Power Dissipation
    500 W
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Unit Weight
    0.218699 oz
  • Package
    Tube
  • Current-Collector (Ic) (Max)
    88 A
  • Base Product Number
    APT40GR120
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Test Conditions
    600V, 40A, 4.3Ohm, 15V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Series
    -
  • Configuration
    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    500
  • Input Type
    Standard
  • Power - Max
    500 W
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Vce(on) (Max) @ Vge, Ic
    3.2V @ 15V, 40A
  • Continuous Collector Current
    88
  • IGBT Type
    NPT
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    210 nC
  • Current - Collector Pulsed (Icm)
    160 A
  • Td (on/off) @ 25°C
    22ns/163ns
  • Switching Energy
    1.38mJ (on), 906µJ (off)
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