APT25GN120B2DQ2G

Microchip Technology APT25GN120B2DQ2G

Part No:

APT25GN120B2DQ2G

Datasheet:

-

Package:

TO-247-3 Variant

AINNX NO:

31026167-APT25GN120B2DQ2G

Description:

IGBT Transistors FG, IGBT, 1200V, T-MAX, RoHSView in Development Tools Selector

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3 Variant
  • RoHS
    Details
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Unit Weight
    0.208116 oz
  • Package
    Tube
  • Current-Collector (Ic) (Max)
    67 A
  • Base Product Number
    APT25GN120
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Test Conditions
    800V, 25A, 4.3Ohm, 15V
  • Maximum Gate Emitter Voltage
    - 30 V, + 30 V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Series
    -
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    272
  • Input Type
    Standard
  • Power - Max
    272 W
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 25A
  • Continuous Collector Current
    67
  • IGBT Type
    NPT, Trench Field Stop
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    155 nC
  • Current - Collector Pulsed (Icm)
    75 A
  • Td (on/off) @ 25°C
    22ns/280ns
  • Switching Energy
    2.15µJ (off)
0 Similar Products Remaining