APTM50H15FT1G

Microchip APTM50H15FT1G

Part No:

APTM50H15FT1G

Manufacturer:

Microchip

Datasheet:

-

Package:

SP1

AINNX NO:

34276043-APTM50H15FT1G

Description:

Trans MOSFET Array Dual N-CH 500V 25A 12-Pin Case SP1

Products specifications
  • Mounting Type
    Chassis Mount
  • Package / Case
    SP1
  • Supplier Device Package
    SP1
  • Continuous Drain Current Id
    25
  • Package
    Bulk
  • Base Product Number
    APTM50
  • Current - Continuous Drain (Id) @ 25℃
    25A
  • Mfr
    Microchip Technology
  • Product Status
    Active
  • Typical Turn-On Delay Time
    29 ns
  • Vgs th - Gate-Source Threshold Voltage
    3 V
  • Pd - Power Dissipation
    208 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 100 C
  • Vgs - Gate-Source Voltage
    - 30 V, + 30 V
  • Unit Weight
    2.821917 oz
  • Minimum Operating Temperature
    - 40 C
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Mounting Styles
    Screw Mounts
  • Manufacturer
    Microchip
  • Brand
    Microchip Technology / Atmel
  • Rds On - Drain-Source Resistance
    130 mOhms
  • RoHS
    Details
  • Typical Turn-Off Delay Time
    80 ns
  • Id - Continuous Drain Current
    25 A
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C ~ 150°C (TJ)
  • Series
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Type
    Full Bridge
  • Subcategory
    Discrete Semiconductor Modules
  • Technology
    MOSFET (Metal Oxide)
  • Configuration
    4 N-Channel (Half Bridge)
  • Power - Max
    208W
  • Rds On (Max) @ Id, Vgs
    180mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    5448pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    170nC @ 10V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    35 ns
  • Drain to Source Voltage (Vdss)
    500V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    Discrete Semiconductor Modules
  • Channel Type
    Dual N
  • FET Feature
    -
  • Product
    Power MOSFET Modules
  • Product Category

    a particular group of related products.

    Discrete Semiconductor Modules
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