Microchip APTC90DSK12T1G

Package / Case

CSON

Mount

Chassis Mount, Screw

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Number of Pins

1

Number of Terminals

10

Transistor Element Material

SILICON

Product Depth (mm)

5(mm)

Operating Temp Range

-40C to 85C

Rad Hardened

No

Number of Elements

2

RoHS

Compliant

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

400 ns

Package Description

FLANGE MOUNT, R-XUFM-X10

Package Style

FLANGE MOUNT

Package Body Material

UNSPECIFIED

Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature-Max

150 °C

Rohs Code

Yes

Manufacturer Part Number

APTC90DSK12T1G

Package Shape

RECTANGULAR

Manufacturer

Microsemi Corporation

Part Life Cycle Code

Obsolete

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

5.84

Drain Current-Max (ID)

30 A

Usage Level

Industrial grade

ECCN Code

EAR99

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-40 °C

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Subcategory

FET General Purpose Power

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

250 W

Terminal Position

UPPER

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Pin Count

a count of all of the component leads (or pins)

12

JESD-30 Code

R-XUFM-X10

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

250 W

Case Connection

ISOLATED

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

70 ns

Transistor Application

SWITCHING

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

20 ns

Drain to Source Voltage (Vdss)

900 V

Polarity/Channel Type

N-CHANNEL

Continuous Drain Current (ID)

30 A

Gate to Source Voltage (Vgs)

20 V

Drain Current-Max (Abs) (ID)

30 A

Drain-source On Resistance-Max

0.12 Ω

Screening Level

INDUSTRIALC

Pulsed Drain Current-Max (IDM)

75 A

Input Capacitance

The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

6.8 nF

DS Breakdown Voltage-Min

900 V

Avalanche Energy Rating (Eas)

1940 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)

250 W

Rds On Max

120 mΩ

Product Length (mm)

7(mm)

Product Height (mm)

1.4(mm)

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No