Microchip APTC60VDAM45T1G

Lifecycle Status

Production (Last Updated: 2 months ago)

Mounting Type

Chassis Mount

Package / Case

SP1

Mount

Chassis Mount, Screw

Number of Pins

1

Supplier Device Package

SP1

Continuous Drain Current Id

49

Package

Tray

Base Product Number

APTC60

Current - Continuous Drain (Id) @ 25℃

49A

Mfr

Microchip Technology

Product Status

Active

Factory Pack QuantityFactory Pack Quantity

1

Manufacturer

Microchip

Brand

Microchip Technology

RoHS

Details

Number of Elements

2

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

100 ns

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-40°C ~ 150°C (TJ)

Series

CoolMOS™

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-40 °C

Subcategory

Discrete Semiconductor Modules

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

250 W

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

250

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

21 ns

Power - Max

250W

Rds On (Max) @ Id, Vgs

45mOhm @ 24.5A, 10V

Vgs(th) (Max) @ Id

3.9V @ 3mA

Input Capacitance (Ciss) (Max) @ Vds

7200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

30 ns

Drain to Source Voltage (Vdss)

600V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

Discrete Semiconductor Modules

Continuous Drain Current (ID)

49 A

Gate to Source Voltage (Vgs)

20 V

Input Capacitance

The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

7.2 nF

Channel Type

Dual N

FET Feature

Super Junction

Rds On Max

45 mΩ

Product Category

a particular group of related products.

Discrete Semiconductor Modules

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No