MMD65R380QRH

MagnaChip Semiconductor Ltd MMD65R380QRH

Part No:

MMD65R380QRH

Datasheet:

Package:

-

AINNX NO:

69153599-MMD65R380QRH

Description:

Power Field-Effect Transistor,

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    MAGNACHIP SEMICONDUCTOR LTD
  • Drain Current-Max (ID)
    10.6 A
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • ECCN Code
    EAR99
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSSO-G2
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-252AA
  • Drain-source On Resistance-Max
    0.38 Ω
  • Pulsed Drain Current-Max (IDM)
    31.8 A
  • DS Breakdown Voltage-Min
    650 V
  • Avalanche Energy Rating (Eas)
    215 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    83.3 W
  • Feedback Cap-Max (Crss)
    38.7 pF
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