International Rectifier IRGB4B60KD1PBF

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Supplier Device Package

TO-220AB

Collector-Emitter Breakdown Voltage

600 V

Voltage Rating (DC)

600 V

RoHS

Compliant

Package

Bulk

Current-Collector (Ic) (Max)

11 A

Mfr

International Rectifier

Product Status

Obsolete

Test Conditions

400V, 4A, 100Ohm, 15V

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Bulk

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 175°C (TJ)

Series

-

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

175 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

63 W

Current Rating

Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

11 A

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

63 W

Input Type

Standard

Power - Max

63 W

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

18 ns

Collector Emitter Voltage (VCEO)

2.5 V

Max Collector Current

11 A

Reverse Recovery Time

93 ns

Voltage - Collector Emitter Breakdown (Max)

600 V

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 4A

IGBT Type

NPT

Gate Charge

the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

12 nC

Current - Collector Pulsed (Icm)

22 A

Td (on/off) @ 25°C

22ns/100ns

Switching Energy

73µJ (on), 47µJ (off)

Reverse Recovery Time (trr)

93 ns

Width

4.69 mm

Height

15.24 mm

Length

10.5156 mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

Lead Free

Lead Free