AUIRGR4045D

International Rectifier AUIRGR4045D

Part No:

AUIRGR4045D

Datasheet:

-

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

AINNX NO:

53819422-AUIRGR4045D

Description:

600V Low VCEon IGBT with UltraFast Soft Recovery Diode in a D-Pak package

Products specifications
  • Lifecycle Status
    Obsolete (Last Updated: 2 years ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    TO-252AA
  • Package Quantity
    2000
  • Collector-Emitter Breakdown Voltage
    600 V
  • RoHS
    Compliant
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    75 ns
  • Package
    Bulk
  • Current-Collector (Ic) (Max)
    12 A
  • Base Product Number
    IRGR4045
  • Mfr
    International Rectifier
  • Product Status
    Active
  • Test Conditions
    400V, 6A, 47Ohm, 15V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 175°C (TJ)
  • Series
    -
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    77 W
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    77 W
  • Input Type
    Standard
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    26 ns
  • Power - Max
    77 W
  • Collector Emitter Voltage (VCEO)
    2 V
  • Max Collector Current
    12 A
  • Reverse Recovery Time
    74 ns
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 6A
  • Max Junction Temperature (Tj)
    175 °C
  • Continuous Collector Current
    12 A
  • IGBT Type
    Trench
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    19.5 nC
  • Current - Collector Pulsed (Icm)
    18 A
  • Td (on/off) @ 25°C
    27ns/75ns
  • Switching Energy
    56µJ (on), 122µJ (off)
  • Reverse Recovery Time (trr)
    74 ns
  • Width
    6.22 mm
  • Height
    2.39 mm
  • Length
    6.73 mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
0 Similar Products Remaining