IRFB7437PBF

International Rectifier IRFB7437PBF

Part No:

IRFB7437PBF

Package:

-

AINNX NO:

68716216-IRFB7437PBF

Description:

Description: Power Field-Effect Transistor, 195A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Material
    polyamide PA66, white
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    INTERNATIONAL RECTIFIER CORP
  • Package Description
    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
  • Drain Current-Max (ID)
    195 A
  • Operating Temperature-Max
    175 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • Gross Weight
    0.28
  • Characteristic
    thread (d) - M4; thread length (L) - 16 mm
  • ECCN Code
    EAR99
  • Type
    DIN84 series polyamide screw
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-220AB
  • Drain-source On Resistance-Max
    0.002 Ω
  • Pulsed Drain Current-Max (IDM)
    1000 A
  • DS Breakdown Voltage-Min
    40 V
  • Avalanche Energy Rating (Eas)
    350 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    230 W
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