IRF8707TRPBF

International Rectifier IRF8707TRPBF

Part No:

IRF8707TRPBF

Package:

-

AINNX NO:

68716070-IRF8707TRPBF

Description:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Housing Material
    flame retardant plastic
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    INTERNATIONAL RECTIFIER CORP
  • Drain Current-Max (ID)
    11 A
  • Operating Temperature-Max
    150 °C
  • Gross Weight
    45.25
  • Transport Package Size/Quantity
    35*32*26/200
  • Installation Hole Size
    Ф22 mm
  • Measurement Range
    voltage (AC) - 60…500 V, 0-100A
  • Completeness
    device; ring current sensor Ф14.8/ 32.8 mm
  • Pbfree Code
    Yes
  • ECCN Code
    EAR99
  • Type
    Digital LED Volt-Ammeter DMS series (AD16-22FVA G)
  • Color
    green
  • Depth
    55.5 mm
  • Reach Compliance Code
    unknown
  • Lead Length
    device - 285 mm
  • Configuration
    SINGLE
  • Insulation Resistance

    The measurement of insulation resistance is carried out by means of a megohmmeter – high resistance range ohmmeter. A general rule-of-thumb is 10 Megohm or more.

    ≥2 MOhm
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Polarity/Channel Type
    N-CHANNEL
  • Operating Temperature Range

    An operating temperature is the allowable temperature range of the local ambient environment at which an electrical or mechanical device operates. The device will operate effectively within a specified temperature range which varies based on the device function and application context, and ranges from the minimum operating temperature to the maximum operating temperature (or peak operating temperature).

    -25…+65 °C
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    2.5 W
  • Height
    31.2 mm
  • Width
    26.9 mm
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