SPB73N03S2L-10

Infineon Technologies AG SPB73N03S2L-10

Part No:

SPB73N03S2L-10

Datasheet:

Package:

-

AINNX NO:

69168322-SPB73N03S2L-10

Description:

Power Field-Effect Transistor, 73A I(D), 30V, 0.0131ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-263, 3 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    INFINEON TECHNOLOGIES AG
  • Part Package Code
    TO-263
  • Package Description
    SMALL OUTLINE, R-PSSO-G2
  • Drain Current-Max (ID)
    73 A
  • Number of Elements
    1
  • Operating Temperature-Max
    175 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.0131 Ω
  • Pulsed Drain Current-Max (IDM)
    292 A
  • DS Breakdown Voltage-Min
    30 V
  • Avalanche Energy Rating (Eas)
    170 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    90 W
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