IRFR24N15D

Infineon Technologies AG IRFR24N15D

Part No:

IRFR24N15D

Package:

-

AINNX NO:

68721283-IRFR24N15D

Description:

Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Material
    connector housing - PVC-45P
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Nominal voltage
    250 V
  • Cable cross-section
    3 x 0.75 (42 strands x 0.15 mm) mm2
  • Ihs Manufacturer
    INFINEON TECHNOLOGIES AG
  • Package Description
    PLASTIC, DPAK-3
  • Drain Current-Max (ID)
    24 A
  • Package Body Material
    PLASTIC/EPOXY
  • Rohs Code
    No
  • Part Life Cycle Code
    Active
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e0
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-252AA
  • Drain-source On Resistance-Max
    0.095 Ω
  • Pulsed Drain Current-Max (IDM)
    96 A
  • DS Breakdown Voltage-Min
    150 V
  • Avalanche Energy Rating (Eas)
    170 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Saturation Current
    1
  • Diameter
    sheath - 6.5 ... 6.8 mm
  • Length
    5000 mm
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