Infineon Technologies IGLT65R035D2ATMA1

Package / Case

PG-HDSOP-16

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Rds On - Drain-Source Resistance

42 mOhms

Vgs - Gate-Source Voltage

- 10 V

Vgs th - Gate-Source Threshold Voltage

1.6 V

Qg - Gate Charge

11 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Channel Mode

Enhancement

Type

GaN Transistor

Configuration

Single

Number of Channels

1 Channel

Output Power

That power available at a specified output of a device under specified conditions of operation.

152 W

Transistor Type

1 N-Channel

Product

Power Transistors