IRF7301TR

Infineon Technologies AG IRF7301TR

Part No:

IRF7301TR

Package:

-

AINNX NO:

68718611-IRF7301TR

Description:

Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Weight
    0.2 kg
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    2
  • Gross Weight
    215.00
  • Equivalent
    POS40
  • Soldering Temperature
    285...330 °C
  • Rohs Code
    No
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    INFINEON TECHNOLOGIES AG
  • Drain Current-Max (ID)
    4.3 A
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    coil
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Type
    Soft Tin-Lead Solder Sn/Pb
  • Terminal Finish
    MATTE TIN
  • Composition
    tin - 40%; lead - 60%
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOGIC LEVEL COMPATIBLE
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    MS-012AA
  • Drain-source On Resistance-Max
    0.05 Ω
  • Design
    wire
  • DS Breakdown Voltage-Min
    20 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Saturation Current
    2
  • Diameter
    2 mm
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