BGB741L7ESDE6327XTSA1

Infineon Technologies BGB741L7ESDE6327XTSA1

Part No:

BGB741L7ESDE6327XTSA1

Datasheet:

BGB741L7ESD

Package:

6-XFDFN Exposed Pad

ROHS:

AINNX NO:

729530-BGB741L7ESDE6327XTSA1

Category:

RF Amplifiers

Description:

High-Performance Broad Band LNA MMIC 6-Pin TSLP EP T/R

Products specifications
  • Factory Lead Time
    8 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-XFDFN Exposed Pad
  • Number of Pins
    6
  • Usage Level
    Military grade
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e4
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Terminal Finish
    Gold (Au)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    120mW
  • Voltage - Supply
    1.8V~4V
  • Construction
    COMPONENT
  • Frequency
    50MHz~3.5GHz
  • Test Frequency

    a statistical procedure for assessing data that contain counts or the numbers of occurrences of various categories or classes.

    1.5GHz
  • Current - Supply
    30mA
  • Halogen Free
    Halogen Free
  • Gain
    19.5dB
  • RF/Microwave Device Type
    WIDE BAND LOW POWER
  • RF Type

    The rate of oscillation of electromagnetic radio waves in the range of 3 kHz to 3 GHz, as well as the alternating currents carrying the radio signals.

    Cellular, RKE, WiFi
  • Input Power-Max (CW)
    20dBm
  • Characteristic Impedance
    50Ohm
  • Max Junction Temperature (Tj)
    150°C
  • Noise Figure

    Noise figure (NF) and noise factor (F) are measures of degradation of the signal-to-noise ratio (SNR), caused by components in a signal chain.

    1dB
  • P1dB
    -6.5dBm
  • Height
    500μm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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