BGA416E6327HTSA1

Infineon Technologies BGA416E6327HTSA1

Part No:

BGA416E6327HTSA1

Datasheet:

BGA416

Package:

TO-253-4, TO-253AA

ROHS:

AINNX NO:

732798-BGA416E6327HTSA1

Category:

RF Amplifiers

Description:

RF Amp Chip Single GP 5V 4-Pin(3+Tab) SOT-143 T/R

Products specifications
  • Factory Lead Time
    6 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-253-4, TO-253AA
  • Number of Pins
    4
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    100mW
  • Voltage - Supply
    2.5V~5V
  • Construction
    COMPONENT
  • Frequency
    100MHz~3GHz
  • Operating Supply Voltage

    The voltage level by which an electrical system is designated and to which certain operating characteristics of the system are related.

    3V
  • Number of Channels
    1
  • Test Frequency

    a statistical procedure for assessing data that contain counts or the numbers of occurrences of various categories or classes.

    1.8GHz
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    100mW
  • Current - Supply
    5.5mA
  • Halogen Free
    Not Halogen Free
  • Gain
    11dB
  • RF/Microwave Device Type
    WIDE BAND LOW POWER
  • RF Type

    The rate of oscillation of electromagnetic radio waves in the range of 3 kHz to 3 GHz, as well as the alternating currents carrying the radio signals.

    Cellular, GSM, CDMA, TDMA, UMTS
  • Input Power-Max (CW)
    8dBm
  • Characteristic Impedance
    50Ohm
  • Noise Figure

    Noise figure (NF) and noise factor (F) are measures of degradation of the signal-to-noise ratio (SNR), caused by components in a signal chain.

    1.6dB
  • P1dB
    -3dBm
  • Height
    900μm
  • Length
    2.9mm
  • Width
    1.3mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
  • Lead Free
    Lead Free
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