BCR08PNH6327XTSA1

Infineon Technologies BCR08PNH6327XTSA1

Part No:

BCR08PNH6327XTSA1

Datasheet:

BCR08PN

Package:

6-VSSOP, SC-88, SOT-363

ROHS:

AINNX NO:

7835069-BCR08PNH6327XTSA1

Description:

Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R

Products specifications
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-VSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Collector-Emitter Breakdown Voltage
    50V
  • Number of Elements
    2
  • hFEMin
    70
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    BUILT-IN BIAS RESISTOR RATIO 1
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    250mW
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Base Part Number
    BCR08PN
  • Polarity
    NPN, PNP
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    250mW
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 5mA 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA
  • Transition Frequency
    100MHz
  • Frequency - Transition
    170MHz
  • Resistor - Base (R1)
    2.2k Ω
  • Resistor - Emitter Base (R2)
    47k Ω
  • Height
    800μm
  • Length
    2mm
  • Width
    1.25mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Infineon Technologies BCR08PNH6327XTSA1.