IFS75B12N3T4_B31

Infineon IFS75B12N3T4_B31

Part No:

IFS75B12N3T4_B31

Manufacturer:

Infineon

Datasheet:

Package:

-

AINNX NO:

32899126-IFS75B12N3T4_B31

Description:

IGBT Modules MIPAQ BASE 1200V 75A

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    34
  • Transistor Element Material
    SILICON
  • Manufacturer Part Number
    IFS75B12N3T4_B31
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    INFINEON TECHNOLOGIES AG
  • Package Description
    FLANGE MOUNT, R-XUFM-X34
  • Risk Rank
    5.83
  • Number of Elements
    6
  • Operating Temperature-Max
    175 °C
  • Package Body Material
    UNSPECIFIED
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Turn-off Time-Nom (toff)
    490 ns
  • Turn-on Time-Nom (ton)
    185 ns
  • Pbfree Code
    No
  • ECCN Code
    EAR99
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-XUFM-X34
  • Configuration
    BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
  • Case Connection
    ISOLATED
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (Abs)
    385 W
  • Collector Current-Max (IC)
    75 A
  • Collector-Emitter Voltage-Max
    1200 V
  • Gate-Emitter Voltage-Max
    20 V
  • VCEsat-Max
    2.15 V
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