Infineon JANTX2N7219

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Mount

Through Hole

Number of Pins

3

Number of Terminals

3

Transistor Element Material

SILICON

Manufacturer Part Number

JANTX2N7219

Rohs Code

No

Part Life Cycle Code

Active

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Package Description

HERMETIC SEALED, TO-254AA, 3 PIN

Risk Rank

5.14

Drain Current-Max (ID)

18 A

Number of Elements

1

Operating Temperature-Max

150 °C

Package Body Material

METAL

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Reflow Temperature-Max (s)

NOT SPECIFIED

Schedule B

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

RoHS

Compliant

JESD-609 Code

e0

ECCN Code

EAR99

Terminal Finish

Tin/Lead (Sn/Pb)

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

125 °C

Min Operating Temperature

-55 °C

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

HIGH RELIABILITY

Terminal Position

SINGLE

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

PIN/PEG

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Reference Standard

MIL-19500/596

JESD-30 Code

R-MSFM-P3

Qualification Status

An indicator of formal certification of qualifications.

Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

125 W

Case Connection

ISOLATED

Transistor Application

SWITCHING

Polarity/Channel Type

N-CHANNEL

Continuous Drain Current (ID)

18 A

JEDEC-95 Code

TO-254AA

Gate to Source Voltage (Vgs)

20 V

Drain Current-Max (Abs) (ID)

18 A

Drain-source On Resistance-Max

0.25 Ω

Pulsed Drain Current-Max (IDM)

72 A

DS Breakdown Voltage-Min

200 V

Avalanche Energy Rating (Eas)

450 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)

125 W

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

Lead Free

Contains Lead