Infineon BSM25GD100D

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Number of Terminals

17

Transistor Element Material

SILICON

Voltage, Rating

50 V

Manufacturer Part Number

BSM25GD100D

Manufacturer

Infineon

Package Description

FLANGE MOUNT, R-PUFM-D17

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Turn-on Time-Nom (ton)

30 ns

Operating Temperature-Max

150 °C

Turn-on Time-Max (ton)

40 ns

Package Shape

RECTANGULAR

Number of Elements

6

Part Life Cycle Code

Transferred

Ihs Manufacturer

SIEMENS A G

Risk Rank

5.27

Tolerance

0.25 %

Temperature Coefficient

The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

25 ppm/°C

Resistance

49.3 Ω

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

155 °C

Min Operating Temperature

-55 °C

Composition

Thin Film

Subcategory

Insulated Gate BIP Transistors

Power Rating

100 mW

Terminal Position

UPPER

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

SOLDER LUG

Reach Compliance Code

unknown

JESD-30 Code

R-PUFM-D17

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Configuration

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

Case Connection

ISOLATED

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

300 W

Collector Current-Max (IC)

25 A

Collector-Emitter Voltage-Max

1000 V

Gate-Emitter Voltage-Max

20 V

VCEsat-Max

3.3 V

Gate-Emitter Thr Voltage-Max

6.2 V

Power Dissipation Ambient-Max

300 W

Height

550 µm