RFD10N05SM96
-
69255688-RFD10N05SM96
IRF9640
Harris SemiconductorPower Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABHUF76121D3ST
Harris SemiconductorPower Field-Effect Transistor, 20A I(D), 30V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AAIRFP450
Harris SemiconductorPower Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247JANTX2N6851
Harris SemiconductorDescription: Small Signal Field-Effect Transistor, 4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AFIRFP9140
Harris SemiconductorPower Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-2472N5484
Harris SemiconductorTransistorRFM12N08
Harris SemiconductorPower Field-Effect Transistor, 12A I(D), 80V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AARFP18N10
Harris SemiconductorPower Field-Effect Transistor, 18A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABRFP50N06LE
Harris SemiconductorPower Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSK3024
Harris SemiconductorTransistor