Harris Corporation IRFF111

Mounting Type

Through Hole

Package / Case

TO-205AF Metal Can

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Supplier Device Package

TO-205AF (TO-39)

Number of Terminals

3

Transistor Element Material

SILICON

Mfr

Harris Corporation

Package

Bulk

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

15W (Tc)

RoHS

Non-Compliant

Package Style

CYLINDRICAL

Moisture Sensitivity Levels

NOT SPECIFIED

Package Body Material

METAL

Reflow Temperature-Max (s)

NOT SPECIFIED

Rohs Code

No

Manufacturer Part Number

IRFF111

Package Shape

ROUND

Manufacturer

Rochester Electronics LLC

Number of Elements

1

Part Life Cycle Code

Active

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Risk Rank

5.38

Drain Current-Max (ID)

3.5 A

Series

-

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

JESD-609 Code

e0

Pbfree Code

No

Terminal Finish

TIN LEAD

Terminal Position

BOTTOM

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

WIRE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

JESD-30 Code

O-MBCY-W3

Qualification Status

An indicator of formal certification of qualifications.

COMMERCIAL

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

600mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

135 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs

7.5 nC @ 10 V

Drain to Source Voltage (Vdss)

80 V

Vgs (Max)

±20V

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-205AF

Drain-source On Resistance-Max

0.6 Ω

Pulsed Drain Current-Max (IDM)

14 A

DS Breakdown Voltage-Min

80 V

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

-