Harris Corporation IRFP245

Mounting Type

Through Hole

Package / Case

TO-247-3

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Supplier Device Package

TO-247

Number of Terminals

3

Transistor Element Material

SILICON

Mfr

Harris Corporation

Package

Bulk

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

150W (Tc)

RoHS

Non-Compliant

Package Style

FLANGE MOUNT

Moisture Sensitivity Levels

NOT SPECIFIED

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

NOT SPECIFIED

Rohs Code

No

Manufacturer Part Number

IRFP245

Package Shape

RECTANGULAR

Manufacturer

Rochester Electronics LLC

Number of Elements

1

Part Life Cycle Code

Active

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Risk Rank

5.35

Drain Current-Max (ID)

14 A

Series

-

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

JESD-609 Code

e0

Pbfree Code

No

Terminal Finish

TIN LEAD

Terminal Position

SINGLE

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

JESD-30 Code

R-PSFM-T3

Qualification Status

An indicator of formal certification of qualifications.

COMMERCIAL

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

340mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1300 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs

59 nC @ 10 V

Drain to Source Voltage (Vdss)

250 V

Vgs (Max)

±20V

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-247

Drain-source On Resistance-Max

0.34 Ω

Pulsed Drain Current-Max (IDM)

56 A

DS Breakdown Voltage-Min

250 V

Avalanche Energy Rating (Eas)

550 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

-