All Products

ManufacturersRFQ BlogContact UsAbout Us
Home /Discrete Semiconductor Products /Diodes - Rectifiers - Single /G5S06510QT /
G5S06510QT

Global Power Technology-GPT G5S06510QT

Part No:

G5S06510QT

Datasheet:

-

Package:

4-PowerTSFN

AINNX NO:

28488332-G5S06510QT

Description:

DIODE SIL CARBIDE 650V 53A 4DFN

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    4-PowerTSFN
  • Supplier Device Package
    4-DFN (8x8)
  • Mfr
    Global Power Technology-GPT
  • Package
    Tape & Box (TB)
  • Product Status
    Active
  • Ptot(W),Tc=25℃
    120
  • Ptot(W),Tc=110℃
    52
  • Config.
    Single
  • Vrrm(V)
    650
  • IF(A),Tc=160℃
    10（154℃）
  • IF(A),Tc=125℃
    15（135℃）
  • IF(A),Tc=25℃
    31.9
  • Ifsm(A),Tc=25℃
    90
  • Qc(nC),TJ=25℃
    32（VR=400V）
  • Series
    -
  • Speed
    No Recovery Time > 500mA (Io)
  • Diode Type
    Silicon Carbide Schottky
  • Current - Reverse Leakage @ Vr
    50 μA @ 650 V
  • Voltage - Forward (Vf) (Max) @ If
    1.5 V @ 10 A
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max)
    650 V
  • Current - Average Rectified (Io)
    53A
  • Capacitance @ Vr, F
    645pF @ 0V, 1MHz
  • Reverse Recovery Time (trr)
    0 ns
0 Similar Products Remaining
Related Categories
Popular Search
Hot Sale