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G3S12003H

Global Power Technology-GPT G3S12003H

Part No:

G3S12003H

Manufacturer:

Global Power Technology-GPT

Datasheet:

Package:

TO-220-2 Full Pack

AINNX NO:

28488308-G3S12003H

Category:

Diodes - Rectifiers - Single

Description:

DIODE SIL CARB 1.2KV 9A TO220F

Products specifications

Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack
Supplier Device Package
TO-220F
Mfr
Global Power Technology-GPT
Package
Tape & Box (TB)
Product Status
Active
Series
-
Speed
No Recovery Time > 500mA (Io)
Diode Type
Silicon Carbide Schottky
Current - Reverse Leakage @ Vr
100 μA @ 1200 V
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 3 A
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
9A
Capacitance @ Vr, F
260pF @ 0V, 1MHz
Reverse Recovery Time (trr)
0 ns

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