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G3S06510M

Global Power Technology-GPT G3S06510M

Part No:

G3S06510M

Datasheet:

-

Package:

TO-220-2 Full Pack

AINNX NO:

28488174-G3S06510M

Description:

DIODE SIL CARB 650V 21A TO220F

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-2 Full Pack
  • Supplier Device Package
    TO-220F
  • Mfr
    Global Power Technology-GPT
  • Package
    Tape & Box (TB)
  • Product Status
    Active
  • Qc(nC),TJ=25℃
    32（VR=400V）
  • Ifsm(A),Tc=25℃
    100
  • IF(A),Tc=25℃
    22.1
  • IF(A),Tc=125℃
    9.8(135℃)
  • IF(A),Tc=160℃
    10（133.5℃）
  • Vrrm(V)
    650
  • Config.
    Single
  • Ptot(W),Tc=110℃
    26
  • Ptot(W),Tc=25℃
    60
  • Series
    -
  • Speed
    No Recovery Time > 500mA (Io)
  • Diode Type
    Silicon Carbide Schottky
  • Current - Reverse Leakage @ Vr
    50 μA @ 650 V
  • Voltage - Forward (Vf) (Max) @ If
    1.7 V @ 10 A
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max)
    650 V
  • Current - Average Rectified (Io)
    21A
  • Capacitance @ Vr, F
    690pF @ 0V, 1MHz
  • Reverse Recovery Time (trr)
    0 ns
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