G3R20MT17N

GeneSiC Semiconductor G3R20MT17N

Part No:

G3R20MT17N

Datasheet:

-

Package:

QFN

AINNX NO:

36376938-G3R20MT17N

Description:

Silicon Carbide MOSFET,Single, N Channel, 100 A, 1.7 kV, 0.02 ohm, SOT-227

Products specifications
  • Package / Case
    QFN
  • Mounting Type
    Chassis Mount
  • Supplier Device Package
    SOT-227
  • Standard Frequency
    66
  • Operating Temp Range
    -40C to 85C
  • Operating Supply Voltage (Max)
    2.75(V)
  • Operating Supply Voltage (Min)
    2.25(V)
  • Programmable
    No
  • Continuous Drain Current Id
    100A
  • Vds - Drain-Source Breakdown Voltage
    1.7 kV
  • Typical Turn-On Delay Time
    117 ns
  • Vgs th - Gate-Source Threshold Voltage
    2.7 V
  • Pd - Power Dissipation
    476 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Vgs - Gate-Source Voltage
    - 5 V, + 15 V
  • Unit Weight
    1 oz
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    10
  • Mounting Styles
    SMD/SMT
  • Forward Transconductance - Min
    38.6 S
  • Channel Mode
    Enhancement
  • Manufacturer
    GeneSiC Semiconductor
  • Brand
    GeneSiC Semiconductor
  • Qg - Gate Charge
    256 nC
  • Rds On - Drain-Source Resistance
    20 mOhms
  • RoHS
    Details
  • Typical Turn-Off Delay Time
    134 ns
  • Id - Continuous Drain Current
    92 A
  • Package
    Tube
  • Base Product Number
    G3R20
  • Current - Continuous Drain (Id) @ 25℃
    100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Mfr
    GeneSiC Semiconductor
  • Power Dissipation (Max)
    523W (Tc)
  • Product Status
    Active
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Series
    G3R
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 175°C (TJ)
  • Type
    CLOCK OSCILLATOR
  • Subcategory
    MOSFETs
  • Technology
    SiC
  • Frequency Stability

    the variation of output frequency of a crystal oscillator due to external conditions like temperature variation, voltage variation, output load variation, and frequency aging.

    ±25(ppm)
  • Symmetry-Max
    55(%)
  • Configuration
    Single
  • Number of Channels
    1 Channel
  • Load Capacitance

    the amount of capacitance measured or computed across the crystal terminals on the PCB. Frequency Tolerance. Frequency tolerance refers to the allowable deviation from nominal, in parts per million (PPM), at a specific temperature, usually +25°C.

    15(pF)
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    523W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    26mOhm @ 75A, 15V
  • Vgs(th) (Max) @ Id
    2.7V @ 15mA
  • Input Capacitance (Ciss) (Max) @ Vds
    10187 pF @ 1000 V
  • Gate Charge (Qg) (Max) @ Vgs
    400 nC @ 15 V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    129 ns
  • Drain to Source Voltage (Vdss)
    1700 V
  • Vgs (Max)
    ±15V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    MOSFET
  • Transistor Type
    MOSFET
  • Channel Type
    N Channel
  • FET Feature
    -
  • Product
    MOSFET
  • Product Category

    a particular group of related products.

    MOSFET
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